Ultra-thin oxide reliability for ULSI applications

By Ernest Y. Wu, James H. Stathis, Liang-Kai Han. 2000

147 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/fd054d79abd1c2d569ffc88a2526241ca819eeb7

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In Electrical and Electronic Engineering

1. Jordi Suñé
2. John Robertson

Citations in the corpus

• Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments (2010, methodology): “The Weibull probability distribution is employed in the lifetime projection because, although the Weibull and lognormal distributions fit data of limited sample number almost equally well, the Weibull statistics describes the dielectric breakdown of large sample sizes better than the lognormal distr”
• New physics-based analytic approach to the thin-oxide breakdown statistics (2001, methodology): “The fitting of Wu’s data [13] to a straight line is extremely good with and nm, as shown in Fig.”
• Alternative dielectrics to silicon dioxide for memory and logic devices (2000, background): “At high leakage current densities there are related reliability issue”