Jordi Suñé

Electrical and Electronic Engineering · 2001–2018

A researcher in the Science corpus: 7 papers; trusts 2 researchers and is trusted by 11 researchers here, as inferred from the citation graph.

Subfields

Whom Jordi Suñé trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Ernest Y. Wu
  2. James H. Stathis

Who trusts Jordi Suñé overall

  1. Ernest Y. Wu
  2. J. McPherson
  3. Andreas Kerber
  4. Alex Vayshenker
  5. Rolf-Peter Vollertsen
  6. An Chen
  7. Edward J. Nowak
  8. David Jiménez

Papers from Jordi Suñé's perspective

Ordered by how strongly the researchers Jordi Suñé trusts endorse each paper. Same corpus, a different order for every researcher.

  1. New physics-based analytic approach to the thin-oxide breakdown statistics (IEEE Electron Device Letters)
  2. Multiple-gate SOI MOSFETs
  3. Beyond the conventional transistor (IBM Journal of Research and Development)
  4. Multiple-gate SOI MOSFETs: device design guidelines
  5. Modeling of nanoscale gate-all-around MOSFETs (IEEE Electron Device Letters)
  6. A continuous, analytic drain-current model for DG MOSFETs
  7. Ultra-thin oxide reliability for ULSI applications
  8. Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification (2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.)
  9. A comprehensive model of PMOS NBTI degradation (Microelectronics and reliability)
  10. A critical examination of the mechanics of dynamic NBTI for PMOSFETs (IEEE International Electron Devices Meeting 2003)

Their papers