Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits

By James H. Stathis. 2001

195 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d004ae44a1f9a9baff25b89d67234f46e149097b

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In Electrical and Electronic Engineering

1. Jin Qin
2. Xiaojun Li
3. Joseph B. Bernstein

Citations in the corpus

• Compact Modeling of MOSFET Wearout Mechanisms for Circuit-Reliability Simulation (2008, methodology): “TDDB is a weakest link mechanism, because the first breakdown of any small portion in the gate oxide of a device will lead to the failure of the device and the whole circuit [ 37 ].”