Dielectric breakdown mechanisms in gate oxides

By S. Lombardo, James H. Stathis, B. Linder, K. Pey, F. Palumbo, C. Tung. 2005

439 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/a23bb7263f420d1285e7984167245d9128856a5b

How researchers see this paper

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In Electrical and Electronic Engineering

1. Daniele Ielmini
2. R. Bruchhaus
3. Rainer Waser
4. Andrea Leonardo Lacaita
5. U. Russo
6. H. Philip Wong
7. Shimeng Yu
8. Ilia Valov

Citations in the corpus

• Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices (2009, background): “In the forming operation, a CF builds up as a result of dielectric breakdown [21], which results in the experimental”
• Thermochemical resistive switching: materials, mechanisms, and scaling projections (2011, methodology): “The localized nature of the breakdown process in silicon dioxide (SiO2) has been demonstrated by several techniques, including SEM [17], TEM [18], and optical Figure 2.”