Andreas Kerber
Electrical and Electronic Engineering · 2003–2009
A researcher in the Science corpus: 2 papers; trusts 2 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 12 citations into it
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Who trusts Andreas Kerber overall
Papers from Andreas Kerber's perspective
Ordered by how strongly the researchers Andreas Kerber trusts endorse each paper. Same corpus, a different order for every researcher.
- Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics (IEEE Electron Device Letters)
- New physics-based analytic approach to the thin-oxide breakdown statistics (IEEE Electron Device Letters)
- Ultrathin high-K gate stacks for advanced CMOS devices (International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224))
- Defect dominated charge transport in amorphous Ta2O5 thin films
- Review on high-k dielectrics reliability issues (IEEE transactions on device and materials reliability)
- Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters (IEEE Transactions on Electron Devices)
- High dielectric constant gate oxides for metal oxide Si transistors
- The negative bias temperature instability in MOS devices: A review (Microelectronics and reliability)
- Band offsets of wide-band-gap oxides and implications for future electronic devices
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