Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
By Giovanni Verzellesi, D. Saguatti, Matteo Meneghini, F. Bertazzi, M. Goano, Gaudenzio Meneghesso, Enrico Zanoni. 2013
392 citations recorded by the source corpus.
Physical mechanisms causing the efficiency droop in InGaN/GaN blue light-emitting diodes and remedies proposed for droop mitigation are classified and reviewed. Droop mechanisms taken into consideration are Auger recombination, reduced active volume effects, carrier delocalization, and carrier leakage. The latter can in turn be promoted by polarization charges, inefficient hole injection, asymmetry between electron and hole densities and transport properties, lateral current crowding, quantum-well overfly by ballistic electrons, defect-related tunneling, and saturation of radiative recombination. Reviewed droop remedies include increasing the thickness or number of the quantum wells, improving the lateral current uniformity, engineering the quantum barriers (including multi-layer and graded quantum barriers), using insertion or injection layers, engineering the electron-blocking layer (EBL) (including InAlN, graded, polarization-doped, and superlattice EBL), exploiting reversed polarization (by either inv...
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/2e71435d35efd127b20e3eb9aa3c7acff47899c2
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Citations in the corpus
- ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review (2014, positive): “Being the basis for the guess on the influential role of Auger recombination for LED efficiency [1], the ABC-model turned out to be helpful for finding effective ways to improve the device performance [2].”