AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

By Enrico Zanoni, Matteo Meneghini, Alessandro Chini, Denis Marcon, Gaudenzio Meneghesso. IEEE Transactions on Electron Devices, 2013

136 citations recorded by the source corpus.

This paper presents a comprehensive review of AlGaN/GaN high electron mobility transistor failure physics and reliability, focusing on mechanisms affecting the gate-drain edge, where maximum electric field and peak temperatures are reached. Physical effects at the origin of device degradation (inverse piezoelectric effect, time-dependent trap formation and percolative conductive paths formation, and electrochemical AlGaN and GaN degradation) are discussed on the basis of literature data and unpublished results. Thermally activated mechanisms involving metal-metal and metal-semiconductor interdiffusion at the gate Schottky junction are also discussed.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/0eeec7c522fa6dced1329ea4c62fed4d6a86f241

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In Condensed Matter Physics

1. Gaudenzio Meneghesso
2. Matteo Meneghini
3. Enrico Zanoni
4. Oliver Hilt
5. S. Karpov

In Electrical and Electronic Engineering

1. Matteo Meneghini
2. Gaudenzio Meneghesso
3. Enrico Zanoni
4. Oliver Hilt

Citations in the corpus

• Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate (2016, methodology): “AlGaN, as previously done for reverse-biased Schottky-gated transistors [19].”