Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

By I. Rossetto, Matteo Meneghini, Oliver Hilt, Eldad Bahat Treidel, C. de Santi, S. Dalcanale, J. Wuerfl, Enrico Zanoni, Gaudenzio Meneghesso. IEEE Transactions on Electron Devices, 2016

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Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs (2017, methodology): “6 V, which is a good achievement with respect to prior state of the art [20], [21].”
Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations (2017, background): “be smaller than the breakdown voltage out of reliability considerations) [7], [18]–[20].”
Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate (2017, methodology): “Light emission is supposed to take place in the p-GaN layer, via three possible processes: (i) as shown in Figure 11, the electrons injected from the channel towards the p-GaN region are accelerated by the high field, thus gaining a high energy, and emitting light due to multiple-step transitions (B”