Reliability and parasitic issues in GaN-based power HEMTs: a review

By Gaudenzio Meneghesso, M. Meneghini, I. Rossetto, D. Bisi, S. Stoffels, M. Van Hove, S. Decoutere, E. Zanoni. 2016

132 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/f7ed6bff2bfbb0f8be54ca845b8cc484f91fdf23

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Matteo Meneghini
2. Gaudenzio Meneghesso
3. Oliver Hilt

In Electrical and Electronic Engineering

1. Matteo Meneghini
2. Gaudenzio Meneghesso
3. Oliver Hilt

Citations in the corpus

• Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate (2017, background): “As in the case of normally-off transistors, the exposure to high drain bias in the off-state can trigger further trapping processes, due to the filling of surface states [8], to defects located in the (Cdoped) buffer [6], or to the injection of electrons from the substrate [38].”