Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

By D. Bisi, Matteo Meneghini, C. de Santi, Alessandro Chini, M. Dammann, P. Bruckner, M. Mikulla, Gaudenzio Meneghesso, Enrico Zanoni. IEEE Transactions on Electron Devices, 2013

396 citations recorded by the source corpus.

This paper critically investigates the advantages and limitations of the current-transient methods used for the study of the deep levels in GaN-based high-electron mobility transistors (HEMTs), by evaluating how the procedures adopted for measurement and data analysis can influence the results of the investigation. The article is divided in two parts within Part I. 1) We analyze how the choice of the measurement and analysis parameters (such as the voltage levels used to induce the trapping phenomena and monitor the current transients, the duration of the filling pulses, and the method used for the extrapolation of the time constants of the capture/emission processes) can influence the results of the drain current transient investigation and can provide information on the location of the trap levels responsible for current collapse. 2) We present a database of defects described in more than 60 papers on GaN technology, which can be used to extract information on the nature and origin of the trap levels responsible for current collapse in AlGaN/GaN HEMTs. Within Part II, we investigate how self-heating can modify the results of drain current transient measurements on the basis of combined experimental activity and device simulation.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/af6989f0803b1250a214167b3cc1379258d421dd

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. S. Karpov

In Condensed Matter Physics

1. Gaudenzio Meneghesso
2. Matteo Meneghini
3. Enrico Zanoni
4. Alessandro Chini
5. S. Karpov

In Electrical and Electronic Engineering

1. Matteo Meneghini
2. Gaudenzio Meneghesso
3. Enrico Zanoni
4. Alessandro Chini
5. Enrico Sangiorgi

Citations in the corpus

• Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements (2014, methodology): “To acquire more information on the physical origin of trap E2, we compared its Arrhenius plot to the data reported in more than 60 papers on defects in GaN-based materials and devices ([8]–[34], the full database is reported in [12]).”
• Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs (2017, background): “By considering the database of the deep levels in GaN- and AlGaN-based devices (see [25]), traps having an activation energy of 0.”