Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method

By Matteo Meneghini, N. Ronchi, A. Stocco, Gaudenzio Meneghesso, Umesh K. Mishra, Y. Pei, Enrico Zanoni. IEEE Transactions on Electron Devices, 2011

160 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/5f9e24806da84d3eaab93e1fe7b7bc8545739aa2

How researchers see this paper

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In Atomic and Molecular Physics, and Optics

1. S. Karpov

In Condensed Matter Physics

1. Gaudenzio Meneghesso
2. Matteo Meneghini
3. Enrico Zanoni
4. Alessandro Chini
5. S. Karpov

In Electrical and Electronic Engineering

1. Matteo Meneghini
2. Gaudenzio Meneghesso
3. Enrico Zanoni
4. Alessandro Chini

Citations in the corpus

• Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements (2014, background): “2(a)], than in the linear region, suggesting that trapping does not have a strong impact on the ON-resistance of the devices, while it can significantly influence the threshold voltage [11].”
• Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements (2013, methodology): “This effect is strictly related to charge trapping at deep levels, which can be present in the as-grown material, related to the processing conditions [7], and/or induced by electrical stress.”