Ignaz Eisele
IEEE Transactions on Electron Devices · 2003–2005
A researcher in the Science corpus: 3 papers; trusts 1 researcher and is trusted by 11 researchers here, as inferred from the citation graph.
Whom Ignaz Eisele trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Ignaz Eisele overall
Papers from Ignaz Eisele's perspective
Ordered by how strongly the researchers Ignaz Eisele trusts endorse each paper. Same corpus, a different order for every researcher.
- Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp+ Layer
- Lateral interband tunneling transistor in silicon-on-insulator
- Vertical tunnel field-effect transistor (IEEE Transactions on Electron Devices)
- I and i
- A compact scattering model for the nanoscale double-gate MOSFET
- Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs
- A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications
Their papers
- Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp+ Layer (2004) — 215 citations
- Scaling the vertical tunnel FET with tunnel bandgap modulation and gate workfunction engineering (2005) — 359 citations
- Cobalt oxide based gas sensors on silicon substrate for operation at low temperatures (2003) — 207 citations