Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric
By K. Boucart, Adrian M. Ionescu. IEEE Transactions on Electron Devices, 2007
1,117 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/9310c9871945334edf40a175add5d820e034dae9
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In Electrical and Electronic Engineering
- Mamidala Jagadesh Kumar
- Sneh Saurabh
- Kaustav Banerjee
- Sungjoo Lee
- Zhixian Chen
- J. Madan
- Rishu Chaujar
- Yasin Khatami
Citations in the corpus
- Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital Circuits (2009, background): “This is in agreement with the results in [ 13 ] where a double-gate silicon-based device with high-k material is studied.”
- A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO2/High- $k$ Stacked Gate-Oxide Structure (2016, methodology): “cantly improving drivability of the device in terms of increased value of the ON-to-OFF current ratio [11].”
- Interfacial Charge Analysis of Heterogeneous Gate Dielectric-Gate All Around-Tunnel FET for Improved Device Reliability (2016, background): “To constrain the ambipolarity effect, (tunneling at drain and channel junction) source and drain are doped asymmetrically [9].”
- Performance Enhancement of Novel InAs/Si Hetero Double-Gate Tunnel FET Using Gaussian Doping (2016, background): “In MOSFETs, the threshold voltage is defined as the gate voltage for which strong inversion occurs but there is no such mechanism in the TFET [6].”
- Pseudo-Two-Dimensional Model for Double-Gate Tunnel FETs Considering the Junctions Depletion Regions (2010, methodology): “This current increase is slightly visible on Fig. 7 and is in agreement with the observations from [ 3 ].”
- Performance Assessment of A Novel Vertical Dielectrically Modulated TFET-Based Biosensor (2017, methodology): “The different methods are explored to improve ION and SS-like High-k gate dielectric [12], heterojunction technology [13], [14] (i.”
- Hetero-Gate-Dielectric Tunneling Field-Effect Transistors (2010, neutral): “[1]–[3].”