Suspended-gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor

By N. Abelé, R. Fritschi, K. Boucart, F. Casset, P. Ancey, Adrian M. Ionescu. IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 2005

183 citations recorded by the source corpus.

Reference NANOLAB-CONF-2005-019View record in Web of Science Record created on 2007-05-16, modified on 2017-05-10

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/8c686bb37457b0ba6110014189acfc6d494cd3b0

How researchers see this paper

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In Biomedical Engineering

1. Zhaonian Yang

In Electrical and Electronic Engineering

1. Tsu-Jae King Liu
2. Woo Young Choi
3. Zhaonian Yang

Citations in the corpus

• Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec (2007, background): “However, even in the ideal case of infinite gate capacitance, the SS of MOSFETs cannot be reduced below 60 mV/dec at room temperature.”