High-κ gate dielectrics: Current status and materials properties considerations
By G. Wilk, Robert M. Wallace, J. Anthony. 2001
5,517 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Ceramics and Composites, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/6ff879378a38b4990ec2e0639782dc48c7c6d26e
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In Atomic and Molecular Physics, and Optics
- James Towfik Teherani
- Sekhar Babu Mitta
- Ankur Nipane
- Paul C. McIntyre
- Eduard A. Cartier
- D. Fleetwood
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In Ceramics and Composites
In Electrical and Electronic Engineering
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Citations in the corpus
- Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films (2009, background): “THE THERMAL properties of HfO2, which is currently replacing SiO2 as the gate dielectric of choice below the 45-nm node [1], [2], are of increasing importance since the thermal conductivity and thermal interface resistance can significantly influence the phonon temperature during device switching an”
- Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling (2018, background): “, HfO2) that initially were thicker, more defective, and contained a higher percentage of electron traps than highquality SiO2 gate oxides [2], [4], [8]–[10], [104]–[107].”
- Threshold Voltage Instabilities in High- Gate Dielectric Stacks (2005, background): “Most of the current research and development activities in high- dielectrics are concentrated on binary metal oxides and silicates (see, for example, [ 2 ] and references therein).”