D. Abdi

Electrical and Electronic Engineering · 2014

A researcher in the Science corpus: 2 papers; trusts 9 researchers and is trusted by 3 researchers here, as inferred from the citation graph.

Subfields

Whom D. Abdi trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. K. Boucart
  2. Adrian M. Ionescu
  3. M. Jagadesh Kumar
  4. Alan C. Seabaugh
  5. S. Janardhanan
  6. Woo Young Choi
  7. V. Nagavarapu
  8. Ritesh Jhaveri
  9. Mamidala Jagadesh Kumar
  10. Wei Cao

Who trusts D. Abdi overall

  1. Shubham Sahay
  2. Mamidala Jagadesh Kumar
  3. Zhaonian Yang

Papers from D. Abdi's perspective

Ordered by how strongly the researchers D. Abdi trusts endorse each paper. Same corpus, a different order for every researcher.

  1. The Tunnel Source (PNPN) n-MOSFET: A Novel High Performance Transistor (IEEE Transactions on Electron Devices)
  2. Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope (2008 IEEE International Electron Devices Meeting)
  3. Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric
  4. Effect of Pocket Doping and Annealing Schemes on the Source-Pocket Tunnel Field-Effect Transistor (IEEE Transactions on Electron Devices)
  5. Low-Voltage Tunnel Transistors for Beyond CMOS Logic (Proceedings of the IEEE)
  6. Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure (IEEE Transactions on Electron Devices)
  7. Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser Annealing (IEEE Transactions on Electron Devices)
  8. An analysis on the ambipolar current in Si double-gate tunnel FETs
  9. Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain (IEEE Journal of the Electron Devices Society)
  10. Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp+ Layer

Their papers