Marie Garcia Bardon
Electrical and Electronic Engineering · 2010–2017
A researcher in the Science corpus: 3 papers; trusts 2 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 8 citations into it
Whom Marie Garcia Bardon trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Papers from Marie Garcia Bardon's perspective
Ordered by how strongly the researchers Marie Garcia Bardon trusts endorse each paper. Same corpus, a different order for every researcher.
- Band-to-band tunneling in carbon nanotube field-effect transistors. (Physical Review Letters)
- Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric (IEEE Transactions on Electron Devices)
- Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric
- Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec (IEEE Electron Device Letters)
- A new definition of threshold voltage in Tunnel FETs
- A Simplex Method for Function Minimization
- Essential physics of carrier transport in nanoscale MOSFETs (International Conference on Simulation of Semiconductor Processes and Devices)
- Multi-gate SOI MOSFETs
- Vertical GAAFETs for the Ultimate CMOS Scaling (IEEE Transactions on Electron Devices)
- Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization
Their papers
- Pseudo-Two-Dimensional Model for Double-Gate Tunnel FETs Considering the Junctions Depletion Regions (2010) — 247 citations
- Vertical GAAFETs for the Ultimate CMOS Scaling (2015) — 160 citations
- Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node (2017) — 214 citations