Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics

By Wenjuan Zhu, Jin-Ping Han, T. Ma. IEEE Transactions on Electron Devices, 2004

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Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric (2007, background): “The interfacial layer improves the surface properties (less traps [13], therefore higher Coulomb mobility [14]) and is often used to avoid mobility degradation in MOSFETs employing high-K materials.”
Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric (2007, background): “split C–V due to the interface traps [24].”