A new definition of threshold voltage in Tunnel FETs

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Study of Random Dopant Fluctuation Effects in Germanium-Source Tunnel FETs (2011, background): “The definition of the threshold voltage (VTH) for a TFET is still in debate [19].”
Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor (2011, background): “8) is a manifestation of DIBL in a DGTFET [18].”
2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure (2017, methodology): “To model the threshold voltage (Vth), we will use the maximum TC method [29].”
Tunnel Field Effect Transistor With Raised Germanium Source (2010, background): “Moreover, the drain bias can modulate the tunnel barrier width, resulting in a nonlinear output characteristic [ 5 ].”
Pseudo-Two-Dimensional Model for Double-Gate Tunnel FETs Considering the Junctions Depletion Regions (2010, background): “Contrary to MOSFETs, the subthreshold slope of tunneling field-effect transistors (FETs) is not limited to 60 mV/dec [1], allowing further reduction in the supply voltage.”
Low-Voltage Tunnel Transistors for Beyond CMOS Logic (2010, unknown): “Bhuwalka [77] and Boucart and Ionescu [ 78 ] have proposed a definition, which will provide an average swing”