Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates
By A. Verhulst, William G. Vandenberghe, K. Maex, S. Gendt, M. Heyns, Guido Groeseneken. IEEE Electron Device Letters, 2008
174 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/2c0bd2a0391aede45316ac2735b689d07204c509
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In Biomedical Engineering
- Siyu Koswatta
- Steven J. Koester
- Wilfried E. Haensch
- Joerg Appenzeller
- Mamidala Jagadesh Kumar
- Sneh Saurabh
- Joachim Knoch
In Electrical and Electronic Engineering
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- Heike E. Riel
- Siyu Koswatta
- Sneh Saurabh
- Adrian M. Ionescu
- Steven J. Koester
- Wilfried E. Haensch
- Joerg Appenzeller
Citations in the corpus
- Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs (2010, methodology): “Heterostructures with type-II interface represent the steepest possible p-n junctions and have therefore been investigated as TFET performance boosters in the Si/SiGe heterosystem [5], [8]–[10].”
- Demonstration of Tunneling FETs Based on Highly Scalable Vertical Silicon Nanowires (2009, methodology): “, SiGe) at the tunneling interface, as shown in simulation [7]–[12] and experimental [9] data.”
- Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor (2011, background): “DUCTION Tunnel Field Effect Transistors (TFETs) exhibit an excellent subthreshold swing and a very low leakage current and hence are being actively investigated for future low power CMOS applications [1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20]. However, TFETs suffer from ”
- On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors (2010, methodology): “In order to improve the tunneling current, TFETs with staggered-gap heterojunction source injectors have been investigated, mainly in the SixGe1−x‐Si material system [in this paper, the staggered-gap barrier alignment is defined to have 0 ≤ EG−eff 12 ].”
- InAs–Si Nanowire Heterojunction Tunnel FETs (2012, background): “channel and the drain is silicon, as theoretically detailed in [7] and [8].”
- Tunnel field-effect transistors as energy-efficient electronic switches (2011, background): “The way in which the bands line up with each other at the heterojunction is also crucia”