Jerry G. Fossum

IEEE Transactions on Electron Devices · 2001–2005

A researcher in the Science corpus: 6 papers; trusts 0 researchers and is trusted by 12 researchers here, as inferred from the citation graph.

Who trusts Jerry G. Fossum overall

  1. K. Boucart
  2. Weimin Zhang
  3. Qiang Chen
  4. Vishal P. Trivedi
  5. Jean-Pierre Colinge
  6. Adrian M. Ionescu
  7. Yuan Taur

Papers from Jerry G. Fossum's perspective

Ordered by how strongly the researchers Jerry G. Fossum trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Double-gate CMOS: symmetrical- versus asymmetrical-gate devices
  2. Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs (IEEE International Electron Devices Meeting 2003)
  3. A logic nanotechnology featuring strained-silicon (IEEE Electron Device Letters)
  4. FinFET scaling to 10 nm gate length (Digest. International Electron Devices Meeting,)
  5. The Design of CMOS Radio-Frequency Integrated Circuits
  6. Extension and source/drain design for high-performance FinFET devices
  7. Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation (Digest. International Electron Devices Meeting,)
  8. A spacer patterning technology for nanoscale CMOS
  9. Nanoscale CMOS spacer FinFET for the terabit era
  10. Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness

Their papers