Sneh Saurabh
Electrical and Electronic Engineering · 2011–2016
A researcher in the Science corpus: 2 papers; trusts 5 researchers and is trusted by 2 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 14 citations into it; #9,724 of 16,539 by trust here, #13,963 by citations
Whom Sneh Saurabh trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- K. Boucart
- Anurag Chaudhry
- Adrian M. Ionescu
- Mamidala Jagadesh Kumar
- Yasin Khatami
- K. K. Bhuwalka
- Qin Zhang
- V. Nagavarapu
- Siyu Koswatta
Who trusts Sneh Saurabh overall
Papers from Sneh Saurabh's perspective
Ordered by how strongly the researchers Sneh Saurabh trusts endorse each paper. Same corpus, a different order for every researcher.
- Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric (IEEE Transactions on Electron Devices)
- Low-subthreshold-swing tunnel transistors (IEEE Electron Device Letters)
- Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric
- Tunnel field-effect transistor without gate-drain overlap
- Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates (IEEE Electron Device Letters)
- Scaling the vertical tunnel FET with tunnel bandgap modulation and gate workfunction engineering (IEEE Transactions on Electron Devices)
- Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope (2008 IEEE International Electron Devices Meeting)
- Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital Circuits (IEEE Transactions on Electron Devices)
- The Tunnel Source (PNPN) n-MOSFET: A Novel High Performance Transistor (IEEE Transactions on Electron Devices)
- Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs (IEEE Transactions on Electron Devices)
Their papers
- Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor (2011) — 430 citations
- Fundamentals of Tunnel Field-Effect Transistors (2016) — 154 citations