Tunnel field-effect transistors as energy-efficient electronic switches

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Tunnel Field-Effect Transistors: State-of-the-Art (2014, background): “TUNNEL field-effect transistors (TFETs) use electric-field control of band-to-band tunneling as the current gating mechanism [1], [2].”
Colloquium: Strong-field phenomena in periodic systems (2017, background): “As a result of the continued miniaturization of semiconductor integrated circuits (Ionescu and Riel, 2011; Taur and Ning, 2013), microelectronics has approached operating regimes where dissipation phenomena limit the rate of information processing (Markov, 2014; Pop, 2010).”
Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors (2013, background): “BAND-to-band tunneling field-effect transistors (TFETs) are very attractive for ultralow power applications because of their potential for overcoming the 60 mV/dec limit of the inverse subthreshold slope (SS) in conventional MOSFETs at 300 K [1], [2].”
Doping-Less Tunnel Field Effect Transistor: Design and Investigation (2013, background): “Abrupt junctions are essential for efficient tunneling in TFETs [1], [2], [7].”
A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFET (2014, background): “TUNNELING FET (TFET) is considered as one of the promising devices for ultralow-power application, which is supposed to break the fundamental subthreshold swing (SS) limit of MOSFET and achieve lower OFF-current and steeper slope [1]–[3].”