99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

By T. Morita, S. Tamura, Y. Anda, M. Ishida, Y. Uemoto, T. Ueda, Tsuyoshi Tanaka, D. Ueda. Applied Power Electronics Conference, 2011

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Evaluation of switching performance of SiC devices in PWM inverter fed induction motor drives (2014, background): “and smaller size as compared to their silicon (Si) counterparts [1-8].”
GaN-on-Si Power Technology: Devices and Applications (2017, background): “3% are confirmed in a GIT-based inverter, where high efficiencies are maintained even at lower output power [55].”
Single-Phase T-Type Inverter Performance Benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs (2016, background): “In [10], GaN devices are used at low-frequency three-phase”
Integrated Modular Motor Drive Design With GaN Power FETs (2015, background): “However, the maximum voltages of most of GaN devices available in the market are less than 200 V, which is too low for many motor drive applications.”
Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate (2017, background): “GaN is a wide bandgap semiconductor, with an energy gap of 3.4 eV, and for this reason GaN HEMTs can be operated at high temperature (>300 ◦C) with an excellent control of channel current.”
The 2018 GaN power electronics roadmap (2018, background): “To achieve these objectives for power convertors from a few watts to several hundred kW, it is essential to increase their operating frequency [22].”