Carbon impurities and the yellow luminescence in GaN
By J. L. Lyons, A. Janotti, C. Walle. 2010
586 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/4ae3cdce4ce36e68e7a7cc82c2114fa77f28212d
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In Condensed Matter Physics
- Gaudenzio Meneghesso
- Matteo Meneghini
- Enrico Zanoni
- Shu Yang
- Kuang Sheng
- Shaowen Han
- Oliver Hilt
- Kevin J. Chen
In Electronic, Optical and Magnetic Materials
- C. G. Van de Walle
- Matteo Meneghini
- Kevin J. Chen
- Enrico Zanoni
- Gaudenzio Meneghesso
- Shu Yang
- Alessandro Chini
- Kuang Sheng
In Materials Chemistry
Citations in the corpus
- Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019, background): “The III-nitride buffer stack in the simulation consists of a 0.6-μm UID GaN layer, 1-μm C-doped GaN layer, 2.4-μm Al0.”
- Computationally predicted energies and properties of defects in GaN (2017, background): “We should note that VGa and related complexes are not the only sources of yellow luminescence in GaN; the carbon acceptor (CN) in GaN also has been implicated in causing such transitions.(73)”
- Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate (2016, background): “YL is usually related to gallium vacancies [26] and/or carbon-related defects [27].”
- A brief review of co-doping (2016, background): “In GaN, for example, C-related defects are the likely origin of the yellow luminescence (YL) [212, 214], which is frequently observed.”
- Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements (2013, background): “9eV was also reported more recently in [53] as possible charge-state transition of Carbon impurities in Nitrogen substitutional position (CN).”