Thermal resistance calculation of AlGaN-GaN devices

By A. Darwish, A. Bayba, H. A. Hung. IEEE transactions on microwave theory and techniques, 2004

158 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/83540b565f40fe1a334c0bfe240f5db6bb2ccf3c

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. J. D. del Alamo
2. Jungwoo Joh
3. Gaudenzio Meneghesso
4. Enrico Zanoni
5. Matteo Meneghini
6. Alessandro Chini

In Electrical and Electronic Engineering

1. J. D. del Alamo
2. Jungwoo Joh
3. Gaudenzio Meneghesso
4. Enrico Zanoni
5. Matteo Meneghini
6. Alessandro Chini
7. Kei May Lau
8. Qiang Li

In Mechanics of Materials

1. Jungwoo Joh

Citations in the corpus

• A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors (2011, background): “Although the channel temperature can be calculated or measured through various methods [29]–[31], it is difficult to precisely estimate the temperature at the exact region where”
• Measurement of Channel Temperature in GaN High-Electron Mobility Transistors (2009, methodology): “[18] G. Meneghesso, G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, U. K. Mishra, C. Canali, and E. Zanoni, “Surface-related drain current dispersion effects in AlGaN–GaN HEMTs,” IEEE Trans.”
• A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs (2012, unknown): “[34].”