30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz
By Daehyun Kim, J. D. del Alamo. IEEE Electron Device Letters, 2008
186 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/be11a858bf8f64ce0ed54788e847fe2c8ce99a6a
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- AlGaN/GaN HEMT With 300-GHz $f_{\max}$ (2010, background): “The calibration was verified by insuring that both S12 and S21 of the through standard are less than ± 0.01 dB and that both S11 and S22 are less than −45 dB within the measured frequency range after the calibration [ 5 ].”