Nanometre-scale electronics with III–V compound semiconductors

By J. D. del Alamo. Nature, 2011

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$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric (2011, background): “As Moore’s law is approaching its physical limit, an alternative material is urgently needed as a substitute for future logic transistor applications [6], [7].”
Channel length scaling of MoS2 MOSFETs. (2012, background): “I n thepast decade, as scaling of silicon-based transistor has approached its physical limit, intensive efforts in finding alternative channelmaterials for future logic devices beyond 10 nm node have been made with the main focus on Ge and III V materials because of their superior carrier mobility.(”
The role of contact resistance in graphene field-effect devices (2017, background): “semiconductors have also very limited hole mobility [33].”
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors (2013, background): “70 cm(2)/V · s (calculated from [12]) and 700 cm(2)/V · s [1] and a measured resistivity of 7.”
Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics (2017, positive): “Motivated by the development of III-V channel MOSFETs for high-performance and low-power logic applications, Huang et al. [54] and Orzali et al. [55] re- ported epitaxy of smooth In0.”