AlGaN/GaN HFET reliability

By R. J. Trew, Daniel S. Green, J. Shealy. IEEE Microwave Magazine, 2009

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Testing the Temperature Limits of GaN-Based HEMT Devices (2010, background): “Thus, also the interfacial polarization discontinuity had been preserved.”
Magnetically-Functionalized Self-Aligning Graphene Fillers for High-Efficiency Thermal Management Applications (2015, background): “an order of magnitude increase of the device life-time [7,10].”
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction (2013, background): “semiconductor devices [21], [31], [32].”
A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors (2011, background): “On the other hand, in the OFF-state under high VDG, surface states between the gate and the drain can trap electrons that tunnel from the gate metal [6]–[8].”