Monte Carlo Simulation of Single Event Effects
By R. Weller, M. Mendenhall, R. Reed, peixiong zhao, K. Warren, B. Sierawski, Lloyd W. Massengill. IEEE Transactions on Nuclear Science, 2010
229 citations recorded by the source corpus.
In this paper, we describe a Monte Carlo approach for estimating the frequency and character of single event effects based on a combination of physical modeling of discrete radiation events, device simulations to estimate charge transport and collection, and circuit simulations to determine the effect of the collected charge. A mathematical analysis of the procedure reveals it to be closely related to the rectangular parallelepiped (RPP) rate prediction method. The results of these simulations show that event-to-event variation may have a significant impact when predicting the single-event rate in advanced spacecraft electronics. Specific criteria for supplementing established RPP-based single event analysis with Monte Carlo computations are discussed.
Subfields: Automotive Engineering, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/430dcd447a8344b3923a6f1f0e0304b08e1ef65a
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In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling (2018, background): “sophisticated computational techniques enabled by dramatic improvements in computing power has enabled an increased understanding of radiation-induced energy deposition in MOS structures, including the effects of dose enhancement in devices containing high-Z layers [149], [150].”