Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies

By B. Narasimham, B. Bhuva, peixiong zhao, Lloyd W. Massengill, M. Gadlage, O. Amusan, W. T. Holman, A. Witulski, W. H. Robinson, J. Black and 2 more. IEEE Transactions on Nuclear Science, 2007

184 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Hardware and Architecture

View Paper: https://www.semanticscholar.org/paper/d78f0a38841601af3019f7a6b28ff168bcc71a7c

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In Electrical and Electronic Engineering

1. Lloyd W. Massengill
2. R. Lacoe

In Hardware and Architecture

1. Lloyd W. Massengill
2. R. Lacoe

Citations in the corpus

• Single-Event Transient Pulse Quenching in Advanced CMOS Logic Circuits (2009, methodology): “pulse widths, as collected by Narasimham [5] and shown in the same figure, exhibit a different pulsewidth trend with LET—a much weaker dependence of the pulsewidth on the incident LET.”