RHBD techniques for mitigating effects of single-event hits using guard-gates
By A. Balasubramanian, B. Bhuva, J. D. Black, Lloyd W. Massengill. IEEE Transactions on Nuclear Science, 2005
145 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Hardware and Architecture
View Paper: https://www.semanticscholar.org/paper/67add2d86bfc3ebbd851b8e1290aab6427018742
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In Electrical and Electronic Engineering
- R. Lacoe
- Pascale Gouker
- Véronique Ferlet-Cavrois
- Lloyd W. Massengill
- J. Benedetto
- D. Fleetwood
- Paul E. Dodd
In Hardware and Architecture
Citations in the corpus
- Improving Integrated Circuit Performance Through the Application of Hardness-by-Design Methodology (2008, methodology): “It has recently been proposed to apply guard gates to improve the SEU performance of DICE cell designs [71].”
- Single Event Transients in Digital CMOS—A Review (2013, methodology): “[137] of this technique, as shown in Fig.”
- Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies (2007, background): “Circuit level hardening techniques, such as temporal redundancy [8], guard gates, or glitch filtering [9], require SET pulse-widths to be below a particular circuit timing threshold in order to be effective—the choice of timing threshold often significantly impacts overall circuit performance.”