Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition

By S. Heikman, Stacia Keller, Steven P. DenBaars, Umesh K. Mishra. 2002

364 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/a9a89b9c73e326968fa5b7233acd1d6a5e481814

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In Condensed Matter Physics

1. Primit Parikh

In Electrical and Electronic Engineering

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In Electronic, Optical and Magnetic Materials

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Citations in the corpus

• Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs (2012, neutral): “Fe has been successfully employed to render the buffer semi-insulating [10]–[13] and deliver the highest RF power [1].”
• 30-W/mm GaN HEMTs by field plate optimization (2004, methodology): “Additionally, Fe doping of the GaN buffer was used [10].”