AlGaN/GaN high electron mobility transistors with InGaN back-barriers

By Tomás Palacios, A. Chakraborty, S. Heikman, Stacia Keller, Steven P. DenBaars, Umesh K. Mishra. IEEE Electron Device Letters, 2006

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AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance (2008, methodology): “Various techniques have been developed to boost the RF performance of these FETs—for example, recessed gates [1], slanted recessed gates [2], insulated gates employing either F treatment [3] or dielectrics [4], AlInN barriers [5], InGaN [ 6 ] and AlGaN back barriers [7], ion implantation for ohmic c”
Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices (2007, background): “performance metrics such as very high current densities and high breakdown voltages [1]–[4].”
High-performance E-mode AlGaN/GaN HEMTs (2006, methodology): “demonstrated an excellent high frequency performance with current gain cutoff frequency (fT ) of 163 GHz [7] and a power gain cutoff frequency (fmax) of 230 GHz [ 8 ].”
AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation (2007, methodology): “The AlGaN/GaNlayered structure of the control device was the same as that with 0741-3106/$25.00 © 2007 IEEE the In0.”
Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications (2013, background): “This is accomplished through innovative device scaling technologies such as a selfaligned-gate (SAG) process [1]–[4], n+-GaN ohmic contact regrowth [5], [6], a thin AlN top barrier [7]–[9], an InAlN top barrier [10]–[13], an AlGaN or an InGaN back barrier [14], [15], or a N-polar GaN HEMT structure ”