Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

By S. C. Cruz, Stacia Keller, T. Mates, Umesh K. Mishra, Steven P. DenBaars. 2009

214 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b549c379fad790bb13ffa58f725550080212a0d4