Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

By S. Dasgupta, Nidhi, David F. Brown, Feng Wu, Stacia Keller, J. Speck, Umesh K. Mishra. 2010

140 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/b989b9a2774b6c6a8135b9afb9f8c5504040f0eb

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In Condensed Matter Physics

1. Xiang Gao
2. Shiping Guo

In Electronic, Optical and Magnetic Materials

1. Xiang Gao
2. Shiping Guo

Citations in the corpus

• InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz (2012, background): “To reduce Rc, several groups have successfully demonstrated low contact resistances using molecular beam epitaxy (MBE) regrown contacts in GaN-based HEMTs [14]–[17].”