Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method
By Z. Galazka, R. Uecker, D. Klimm, K. Irmscher, Martin Naumann, Mike Pietsch, A. Kwasniewski, R. Bertram, S. Ganschow, M. Bickermann. 2017
348 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment
View Paper: https://www.semanticscholar.org/paper/f599606e627f331713bc75e3c765a6cabeac411f
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In Electronic, Optical and Magnetic Materials
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Citations in the corpus
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, methodology): “[65] carried out the systematic study on this method and demonstrated a diameter of 2 inβ-Ga2O3 cylindrical single crystal.”
- Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications (2020, methodology): “There are many techniques for the growth of β-Ga2O3 bulk, such as the Czochralski method (CZ) [64, 65], edge-defined film-fed growth (EFG) [66, 67], optical floating zone (OFZ) [68–71], and Bridgman methods [72].”