$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation
By A. Green, K. Chabak, M. Baldini, N. Moser, R. Gilbert, R. Fitch, Günter Wagner, Z. Galazka, J. McCandless, A. Crespo and 2 more. IEEE Electron Device Letters, 2017
214 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment
View Paper: https://www.semanticscholar.org/paper/2a56e46531116f8ec925c84c9e6d13cf43f0e316
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Citations in the corpus
- Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage (2020, background): “In addition, good RF performance [19] and high current”
- Field-Plated Lateral $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2 (2018, background): “9 GHz [12] and a record high breakdown field of 3.”
- 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs (2018, background): “Recently, high current density transistors based on delta doping [4] and nano-membrane platform [5] are demonstrated showing its low-power loss potential and for RF applications [6].”
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “to ensure channel fully depleted under zero Vgs, comprising β-Ga2O3 on insulator field-effect transistors (GOOI FETs) [17], [136], [137] structure and gate recess process [12], [18], [21], [175], [180].”