The electronic structure of β-Ga2O3

By Mohamed E. Mohamed, C. Janowitz, I. Unger, R. Manzke, Z. Galazka, R. Uecker, R. Fornari, J. Weber, J. Varley, C. Walle. 2010

169 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment

View Paper: https://www.semanticscholar.org/paper/722f3fd1d1e8e485117c0053e10db0570825a650

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In Electronic, Optical and Magnetic Materials

1. Z. Galazka

In Materials Chemistry

1. Alan C. Seabaugh
2. Wilfried E. Haensch
3. Debdeep Jena
4. C. D. Walle
5. Huili Grace Xing
6. Z. Galazka

In Renewable Energy, Sustainability and the Environment

1. Z. Galazka

Citations in the corpus

• High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes (2013, methodology): “The extracted optical band gap matches the expected value from the band structure calculated by hybrid density functional theory [20, 21] as shown in Fig.”