Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE
By D. Gogova, G. Wagner, M. Baldini, M. Schmidbauer, K. Irmscher, R. Schewski, Z. Galazka, M. Albrecht, R. Fornari. 2014
165 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment
View Paper: https://www.semanticscholar.org/paper/d9904a2784dce1e0f63008201b08b99ce1921d23
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
In Renewable Energy, Sustainability and the Environment
Citations in the corpus
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “3(c) and (d), there are different natures of defects that exist in UID and Si-doped layers [84].”