On the bulk β-Ga2O3 single crystals grown by the Czochralski method

By Z. Galazka, K. Irmscher, R. Uecker, R. Bertram, Mike Pietsch, A. Kwasniewski, Martin Naumann, T. Schulz, R. Schewski, D. Klimm and 1 more. 2014

550 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/01332d4797776abb1a5bc1a82669b71866486b22

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In Electronic, Optical and Magnetic Materials

1. Z. Galazka
2. Günter Wagner
3. Gregg H. Jessen
4. M. Baldini

In Materials Chemistry

1. Z. Galazka
2. Mengwei Si
3. Peide D. Ye
4. Günter Wagner
5. Gregg H. Jessen
6. M. Baldini

Citations in the corpus

• Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy (2016, methodology): “The layers were grown on 5 9 5 mm(2) and 10 9 10 mm(2) semi-insulating (100) b-Ga2O3 substrates grown by the Czochralski method [9, 10] and processed by CrysTec GmbH.”
• $\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation (2017, methodology): “The substrate was cut from a two-inch boule grown via the Czochralski method [16] with a misorientation of 6° towards”