Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

By K. Chabak, N. Moser, A. Green, D. Walker, S. Tetlak, E. Heller, A. Crespo, R. Fitch, J. McCandless, K. Leedy and 5 more. 2016

318 citations recorded by the source corpus.

Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate. The fin channels have a triangular cross-section and are approximately 300 nm wide and 200 nm tall. FinFETs, with 20 nm Al2O3 gate dielectric and ∼2 μm wrap-gate, demonstrate normally-off operation with a threshold voltage between 0 and +1 V during high-voltage operation. The ION/IOFF ratio is greater than 105 and is mainly limited by high on-resistance that can be significantly improved. At VG = 0, a finFET with 21 μm gate-drain spacing achieved a three-terminal breakdown voltage exceeding 600 V without a field-plate.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/03db9a3bbf668940dead6ee219e50150fee9e17f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. Z. Galazka
2. Akito Kuramata
3. Lei Yuan
4. Yuming Zhang
5. Renxu Jia
6. Hongpeng Zhang
7. Xiaoyan Tang
8. Jichao Hu

In Materials Chemistry

1. Z. Galazka
2. Lei Yuan
3. Yuming Zhang
4. Renxu Jia
5. Hongpeng Zhang
6. Xiaoyan Tang
7. Jichao Hu
8. Jianwu Sun

Citations in the corpus

• Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV (2018, methodology): “In this work, we demonstrate the first high-voltage vertical Ga2O3 MISFETs or FinFETs with E-mode operation and a breakdown voltage over 1 kV.”
• Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, methodology): “Hence, for actual device, where both energy barriers are combined in the gated region, the Vbi(g) is reasonably close to the measured reverse sweep VFB , [138] and the maximum depletion width (Wd) is extracted by (2) [175].”
• $\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation (2017, background): “High voltage β-Ga2O3 MOSFET operation has already made large strides including EC measurements greater than GaN or SiC’s theoretical limit [5] and blocking voltages >600V for both enhancement [6] and depletion-mode [7] devices.”