Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

By K. Irmscher, Z. Galazka, Mike Pietsch, R. Uecker, R. Fornari. 2011

486 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/141d4bb1720db0d118be641fe9a7f1ab54695f3f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. Uttam Singisetti
2. Ke Zeng

In Materials Chemistry

1. Mengwei Si
2. Peide D. Ye
3. Uttam Singisetti
4. Ke Zeng

Citations in the corpus

• 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs (2018, background): “tronics applications due to its high Baliga’s Figure of Merit (BFoM) [1], and also due to the mature bulk crystal growth technologies [2]–[3].”
• Field-Plated Lateral $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2 (2018, unknown): “promising for commercial products [14]–[16].”
• High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm (2016, methodology): “In addition to its excellent material property, potential cost effective substrate can be realized through Czochralski method [11], [12].”