Czochralski growth and characterization of β‐Ga2O3 single crystals

By Z. Galazka, R. Uecker, K. Irmscher, M. Albrecht, D. Klimm, Mike Pietsch, M. Brützam, R. Bertram, S. Ganschow, R. Fornari. 2010

413 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment

View Paper: https://www.semanticscholar.org/paper/0bc9773b1ba2bd2fca5d6f9af2378232f55fea0c

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. Z. Galazka
2. Günter Wagner
3. Lei Yuan
4. Yuming Zhang
5. Hongpeng Zhang
6. Xiaoyan Tang
7. Jichao Hu
8. M. Baldini

In Materials Chemistry

1. Z. Galazka
2. Alan C. Seabaugh
3. Wilfried E. Haensch
4. Debdeep Jena
5. Günter Wagner
6. C. D. Walle
7. Lei Yuan
8. Yuming Zhang

In Renewable Energy, Sustainability and the Environment

1. Z. Galazka
2. Lei Yuan
3. Yuming Zhang
4. Hongpeng Zhang
5. Xiaoyan Tang
6. Jichao Hu
7. Jianwu Sun
8. Renxu Jia

Citations in the corpus

• Growth of β-Ga2O3 single crystals using vertical Bridgman method in ambient air (2016, background): “β-Ga2O3 bulk crystals have until now been grown by optical floating-zone (OFZ) [7,10,11], Czochralski (CZ) [6,8,12] and edge-defined film-fed growth (EFG) [9,13] methods.”
• Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques (2018, neutral): “edu floating-zone (FZ) [7–10], edge-defined film-fed growth (EFG) [11], and Czochralski (CZ) [12,13] methods.”
• Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, methodology): “1(c)–(f) [42], β-Ga2O3 crystals have been grown by several growth techniques, including edge-defined film fed (EFG) [54], floatingzone (FZ) [55]–[57], Czochralski method (CZ) [58]–[60], and vertical Bridgman (VB) [61]–[63] growth meth-”