High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
By Sunkook Kim, A. Konar, W. Hwang, Jong Hak Lee, Jiyoul Lee, Jae-Hak Yang, C. Jung, Hyoungsub Kim, J. Yoo, Jae-Young Choi and 5 more. Nature Communications, 2012
1,544 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/6a7cd4c39d9951bb7b0f20e46bf85634f8454ac2
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In Electrical and Electronic Engineering
- Wei David Liu
- Kaustav Banerjee
- Jiahao Kang
- Alan C. Seabaugh
- Wei Cao
- Wilfried E. Haensch
- Debdeep Jena
- Tao Xu
In Materials Chemistry
- Kaustav Banerjee
- Zhenhua Ni
- Jiahao Kang
- Wei David Liu
- Wei Cao
- Alan C. Seabaugh
- P. Tan
- Wilfried E. Haensch
Citations in the corpus
- Hopping transport through defect-induced localized states in molybdenum disulphide (2013, background): “Kim et al., High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals, Nature Comm. 3, 1011 (2012). 18 S.”
- Charge Scattering and Mobility in Atomically Thin Semiconductors (2013, methodology): “nal optical phonon scattering is dominant. This finding is different from previous works on multi-layer MoS 2 transport where the room temperature µ i−ph was determined by homopolar phonon scattering [30, 31, 32]. µ i−ph ! 9! We have used the static dielectric function for calculating the screened i”