Tomás Palacios
Materials Chemistry · 2005–2021
A researcher in the Science corpus: 25 papers; trusts 10 researchers and is trusted by 3 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 236 citations into it; #11,029 of 11,513 by trust here, #1,222 by citations
- Electrical and Electronic Engineering — 222 citations into it; #10,993 of 16,539 by trust here, #2,251 by citations
- Condensed Matter Physics — 117 citations into it; #1,285 of 1,948 by trust here, #379 by citations
- Atomic and Molecular Physics, and Optics — 81 citations into it
- Electronic, Optical and Magnetic Materials — 79 citations into it
- Mechanics of Materials — 8 citations into it
Whom Tomás Palacios trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Tomás Palacios overall
Papers from Tomás Palacios's perspective
Ordered by how strongly the researchers Tomás Palacios trusts endorse each paper. Same corpus, a different order for every researcher.
- AlGaN/GaN current aperture vertical electron transistors with regrown channels
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
- Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
- Fundamentals of Power Semiconductor Devices
- 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
- Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors (IEEE Transactions on Electron Devices)
- GaN Power Transistors on Si Substrates for Switching Applications (Proceedings of the IEEE)
- Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
- 99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors (Applied Power Electronics Conference)
- High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates (IEEE Electron Device Letters)
Their papers
- Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition. (2012) — 1,146 citations
- Integrated circuits based on bilayer MoS₂ transistors. (2012) — 1,652 citations
- Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces. (2013) — 639 citations
- Electronics based on two-dimensional materials. (2014) — 2,852 citations
- Direct optical detection of Weyl fermion chirality in a topological semimetal (2017) — 397 citations
- Carbon-Nanotube-Embedded Hydrogel Sheets for Engineering Cardiac Constructs and Bioactuators (2013) — 865 citations
- Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors (2013) — 144 citations
- High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates (2017) — 207 citations
- Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs (2005) — 160 citations
- High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology (2010) — 183 citations
- Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors (2010) — 175 citations
- Impact of Graphene Interface Quality on Contact Resistance and RF Device Performance (2011) — 153 citations
- Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics. (2014) — 610 citations
- Graphene-Based Ambipolar RF Mixers (2010) — 274 citations
- 245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment (2011) — 150 citations
- Ultralow contact resistance between semimetal and monolayer semiconductors (2021) — 1,146 citations
- Photoelectric Synaptic Plasticity Realized by 2D Perovskite (2019) — 178 citations
- Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting (2019) — 339 citations
- The 2018 GaN power electronics roadmap (2018) — 1,106 citations
- Gallium nitride vertical power devices on foreign substrates: a review and outlook (2018) — 227 citations