Armin Dadgar
Condensed Matter Physics · 2000–2018
A researcher in the Science corpus: 11 papers; trusts 4 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 32 citations into it
- Electrical and Electronic Engineering — 27 citations into it
- Electronic, Optical and Magnetic Materials — 20 citations into it
Whom Armin Dadgar trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Papers from Armin Dadgar's perspective
Ordered by how strongly the researchers Armin Dadgar trusts endorse each paper. Same corpus, a different order for every researcher.
- High Voltage Vertical GaN p-n Diodes With Avalanche Capability (IEEE Transactions on Electron Devices)
- Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors (IEEE Transactions on Electron Devices)
- Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
- High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates (IEEE Electron Device Letters)
- CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion (IEEE Electron Device Letters)
- Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
- AlGaN/GaN current aperture vertical electron transistors with regrown channels
- Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
- Fundamentals of Power Semiconductor Devices
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
Their papers
- GaN-based optoelectronics on silicon substrates (2002) — 269 citations
- Gallium nitride vertical power devices on foreign substrates: a review and outlook (2018) — 227 citations
- Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 10 20 cm − 3 (2014) — 145 citations
- High Si and Ge n-type doping of GaN doping - Limits and impact on stress (2012) — 169 citations
- Arrays of vertically aligned and hexagonally arranged ZnO nanowires: a new template-directed approach (2005) — 143 citations
- Atomic Arrangement at the AlN/Si(110) Interface (2003) — 133 citations
- GaN‐based epitaxy on silicon: stress measurements (2003) — 144 citations
- MOVPE growth of GaN on Si(1 1 1) substrates (2003) — 133 citations
- Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking (2002) — 168 citations
- GaN-Based Devices on Si (2002) — 179 citations
- Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness (2000) — 307 citations