Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

By W. Lanford, T. Tanaka, Y. Otoki, I. Adesida. 2005

246 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/33d6f05fdac7a7b6481af9a1a183a9d703255bd0

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In Condensed Matter Physics

In Electrical and Electronic Engineering

In Electronic, Optical and Magnetic Materials

Citations in the corpus

Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode (2006, background): “induced by chlorine-based ICP-RIE in the case of recessedgate [16], [19], this lower RTA temperature implies that the CF4 plasma treatment creates lower damages than the chlorinebased ICP-RIE.”
Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer (2008, methodology): “Recess etch below the gate [5], [6] and thin AlGaN barriers [7] have been used to fabricate E-mode”
High-performance E-mode AlGaN/GaN HEMTs (2006, methodology): “[10] used a recess etch under the gate to fabricate E-mode devices with a threshold voltage of VGS = 0.”
AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications (2008, methodology): “Several techniques for the normally-off operation of the AlGaN/GaN HFETs have been reported so far, such as using a thin AlGaN barrier layer [5]–[7], a recessed gate structure [8], [9], a fluoride-based plasma treatment [10], [11], a p-type gate structure [12]–[14], and using a nonpolar a-plane chan”
Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation (2007, background): “Thus, the reduction of the ON-state resistance is limited in this approach [3]–[6].”
High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique (2013, methodology): “Normally-OFF operation on AlGaN/GaN heterostructures has been obtained with several postepitaxy approaches, such as gate recess [4]–[8], fluorine plasma treatment [9], [10], and selective AlGaN barrier layer oxidation [11].”