Radiation-induced edge effects in deep submicron CMOS transistors

By F. Faccio, G. Cervelli. IEEE Transactions on Nuclear Science, 2005

459 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/4902b0ebde7e80cd59d71b050df2214590c8c969

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In Electrical and Electronic Engineering

1. D. Fleetwood
2. R. Lacoe
3. Alessandro Paccagnella

Citations in the corpus

• Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling (2018, background): “In addition to leakage-current related failure, charge trapping in the shallow-trench-isolation (STI) of highly scaled technologies can lead to significantly larger-than-expected voltage shifts in narrow-channel devices [17],[80],[81].”
• Radiation-Induced Short Channel (RISCE) and Narrow Channel (RINCE) Effects in 65 and 130 nm MOSFETs (2015, background): “A radiation-induced narrow channel effect (RINCE) was, for instance, reported first in [7] and attributed to charge trapping in the lateral shallow trench isolation oxide (STI) of NMOS and PMOS transistors.”
• Improving Integrated Circuit Performance Through the Application of Hardness-by-Design Methodology (2008, result): “This explanation is consistent with recent results where a width dependence in the radiation-induced shifts is observed for both NMOS and PMOS transistors [27].”