Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices

By D. Fleetwood, H. Xiong, Z. Y. Lu, C. Nicklaw, J. Felix, peixiong zhao, S. Pantelides. 2002

168 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/0268d9df3ecb0bd93c2257c38b569ffbe7b6934e

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. D. Fleetwood
2. Tibor Grasser
3. Hugh J. Barnaby

Citations in the corpus

• Total-Ionizing-Dose Effects in Modern CMOS Technologies (2006, background): “For example, the ’ defect can simply capture and reemit trapped holes [23].”
• $1/f$ Noise and Defects in Microelectronic Materials and Devices (2015, methodology): “materials [2], [10], [24]–[34].”
• Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling (2018, background): “35, has been enriched by subsequent experimental studies using electron paramagnetic resonance [37], [135]–[140], thermally stimulated current [141]–[143], and low-frequency”
• Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities (2012, background): “Border states are commonly considered the cause of random telegraph and 1/f noise [9].”